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Showing items 743656-743665 of 2348570 (234857 Page(s) Totally) << < 74361 74362 74363 74364 74365 74366 74367 74368 74369 74370 > >> View [10|25|50] records per page
| 淡江大學 |
2010-10-13 |
Schottky barrier height varied by the thermal and the charged molecules adsorption effect
|
葉炳宏; Yeh, Ping-hung; Wang, Zhong-lin |
| 南台科技大學 |
2006 |
Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
|
李明倫; M. L. Lee; J. K. Sheu; S. W. Lin |
| 國立成功大學 |
2006-01-16 |
Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
|
Lee, Min-Lum; Sheu, Jinn-Kong; Lin, S. W. |
| 國立彰化師範大學 |
2005-11 |
Schottky Barrier Heights of Ni/Au Contacts to Heavily Mg-doped P-GaN Films with and Without (NH4)2Sx Treatment from Current-voltage Measurements
|
You, Chang-Feng; Chu, Yow-Lin; Lin, Yow-Jon |
| 臺大學術典藏 |
2019-11-27T02:28:44Z |
Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate
|
CHUN-WEI CHEN;Chen C.W.;Robertson J.; Robertson J.; Chen C.W.; CHUN-WEI CHEN |
| 國立成功大學 |
2011-06 |
Schottky Barrier Mediated Single-Polarity Resistive Switching in Pt Layer-Included TiO(x) Memory Device
|
Chung, Yu-Lung; Lai, Pei Ying; Chen, Ying-Chiuan; Chen, Jen-Sue |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Chien, ND; Chien, ND |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Huang, MK; Huang, MK |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Shia, RK; Shia, RK |
| 國立暨南國際大學 |
2011 |
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
|
Tsai, JJ; Tsai, JJ |
Showing items 743656-743665 of 2348570 (234857 Page(s) Totally) << < 74361 74362 74363 74364 74365 74366 74367 74368 74369 74370 > >> View [10|25|50] records per page
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