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Showing items 16-25 of 107  (11 Page(s) Totally)
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Institution Date Title Author
亞洲大學 2014-03 High Performance Gallium Nitride GAA Nanowire with 7nm diameter for Ultralow-Power Logic Applications Anil Kumar, T;Ch, Min-Cheng;Chen, Min-Cheng;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
亞洲大學 2014-03 A Low-cost 900V rated Multiple RESURF LDMOS Ultrahigh-Voltage Device MOS Transistor Design without EPI Layer Anil Kumar, T;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;Chen, P.A;Chen, P.A
亞洲大學 2014-01 Optimization of SiC Schottky Diode using Linear P-top for Edge Mri, Aryadeep;Mrinal, Aryadeep;Kumar, Vijay;Vivek N, Man;Vivek N, Manjunatha M;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
亞洲大學 2014-01 A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom Kumar, Rahul;Kumar, Rahul;EmitaYulia, H;Hapsari, EmitaYulia;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming; Anil Kumar; Anil Kumar TV
亞洲大學 201310 Process Integration of Best in Class Specific-on Resistance of 20V to 60V 0.18μm Bipolar CMOS DMOS Technology Yulia, Emita;Hapsari, Emita Yulia;Kumar, Rahul;Kumar, Rahul;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Anil, T.V.;Anil, T.V.
亞洲大學 201310 Optimization of SiC Schottky Diode using Linear P for Edge Termination Mri, Aryadeep;Mrinal, Aryadeep;Kumar, Vijay;Vivek, N;Vivek, N;Manjunatha, M;Manjunatha, M;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
亞洲大學 201310 Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep
亞洲大學 201310 Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD Process Technology Kumar, Ankit;Kumar, Ankit;Yulia, Emita;Hapsari, Emita Yulia;Kuma, Vasanth;Kumar, Vasanth;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Ningar, Vivek;Ningaraju, Vivek
亞洲大學 201310 A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom Kumar, Rahul;Kumar, Rahul;EmitaYulia, H;Hapsari, EmitaYulia;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Anil Kumar, T;
亞洲大學 201306 Effects of Antimony and Arsenic Ion Implantation on High Performance of Ultra High Voltage Device Kum, Vasantha;Manjunatha, M;Manjunatha, M;Suresh, Vinay;Suresh, Vinay;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;陳柏安;Chen, P A

Showing items 16-25 of 107  (11 Page(s) Totally)
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