| 亞洲大學 |
2010-03 |
Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2010-03 |
Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;陳兆南 |
| 亞洲大學 |
2010 |
A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques
|
郭宇?;GUO, Yu-Feng;王志功;WANG, Zhi-Gong;許健;Sheu, Gene |
| 亞洲大學 |
2009.08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2009.07 |
VARIATION OF LATERAL THICKNESSTECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE
|
郭宇鋒;Guo, Yufeng;王至剛;Wang1, Zhigong;許健;Sheu, Gene |
| 亞洲大學 |
2009.05 |
A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology
|
許健;Sheu, Gene;楊紹明;許愉珊 |
| 亞洲大學 |
2009.03 |
Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device
|
You, Hsin-Chiang;Liu, Yen-Ling;Tsaur, Shyh-chang;許健;Sheu, Gene |
| 亞洲大學 |
2009-12 |
Combining 2D and 3D Device Simulation for Optimizing LDMOS Design
|
許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2009-11 |
A Three-dimensional Breakdown Model of SOI Lateral Power Transistors with a Circular Layout
|
郭宇峰;Guo, Yufeng;Wang, Zhigong;許健;Sheu, Gene |
| 亞洲大學 |
2009-08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
|
許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2009-08 |
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2009-07 |
VARIATION OF LATERAL THICKNESSTECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE
|
郭宇鋒;Guo,Yufeng;王至剛;Wang1,Zhigong;許健;Sheu,Gene |
| 亞洲大學 |
2009-07 |
Variaton of Lateral Thickness techniques in SOI Lateral High Voltage Transistors
|
郭宇鋒;Guo, Yufeng;王至剛;Wang, Zhigong;許健;Sheu, Gene |
| 亞洲大學 |
2009-05 |
A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology
|
許健;Sheu, Gene;楊紹明;許愉珊;許健;Sheu, Gene |
| 亞洲大學 |
2009-03 |
Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device
|
;You, Hsin-Chiang;Liu, Yen-Ling;Tsaur, Shyh-chang;許健;Sheu, Gene;許健;Sheu, Gene |
| 亞洲大學 |
2009-03 |
Simulation Details for the Electrical Field Distribution and Breakdown Voltage of 0.15μm Thin Film SOI Power Device
|
游信強;You, Hsin-Chiang;曹世昌;Tsaur, Shyh-Chang;許健;Sheu, Gene |
| 亞洲大學 |
2009-01 |
A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2009 |
VARIATION OF LATERAL THICKNESS TECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE
|
許健;Sheu, Gene |
| 亞洲大學 |
2009 |
Reduced Kink Effect in An SOI LDMOS Structure with Graded Drift Region Thickness
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2009 |
An Analytical Model for Surface Electric Field Distributions in Ultra High Voltage (800V) Buried P-top LDMOS Devices
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;曹世昌;Tsaur, Shyh-Chang |
| 亞洲大學 |
2009 |
Comparison of High Voltage (200-300 Volts) Devices for Power Integrated Circuits
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;曹世昌;Tsaur, Shyh-Chang |
| 亞洲大學 |
2009 |
The Reliability of 200V P-channel Silicon-On-Insulator LDMOS on High Side operation
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
