臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 96-107 of 107 (3 Page(s) Totally)
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Institution	Date	Title	Author
亞洲大學	2009-08	Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices	楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學	2009-07	VARIATION OF LATERAL THICKNESSTECHNIQUES IN SOI LATERAL HIGH VOLTAGE　DEVICE	郭宇鋒;Guo,Yufeng;王至剛;Wang1,Zhigong;許健;Sheu,Gene
亞洲大學	2009-07	Variaton of Lateral Thickness techniques in SOI Lateral High Voltage Transistors	郭宇鋒;Guo, Yufeng;王至剛;Wang, Zhigong;許健;Sheu, Gene
亞洲大學	2009-05	A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology	許健;Sheu, Gene;楊紹明;許愉珊;許健;Sheu, Gene
亞洲大學	2009-03	Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device	;You, Hsin-Chiang;Liu, Yen-Ling;Tsaur, Shyh-chang;許健;Sheu, Gene;許健;Sheu, Gene
亞洲大學	2009-03	Simulation Details for the Electrical Field Distribution and Breakdown Voltage of 0.15μm Thin Film SOI Power Device	游信強;You, Hsin-Chiang;曹世昌;Tsaur, Shyh-Chang;許健;Sheu, Gene
亞洲大學	2009-01	A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology	許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
亞洲大學	2009	VARIATION OF LATERAL THICKNESS TECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE	許健;Sheu, Gene
亞洲大學	2009	Reduced Kink Effect in An SOI LDMOS Structure with Graded Drift Region Thickness	許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
亞洲大學	2009	An Analytical Model for Surface Electric Field Distributions in Ultra High Voltage (800V) Buried P-top LDMOS Devices	許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;曹世昌;Tsaur, Shyh-Chang
亞洲大學	2009	Comparison of High Voltage (200-300 Volts) Devices for Power Integrated Circuits	許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;曹世昌;Tsaur, Shyh-Chang
亞洲大學	2009	The Reliability of 200V P-channel Silicon-On-Insulator LDMOS on High Side operation	楊紹明;Yang, Shao-Ming;許健;Sheu, Gene

Showing items 96-107 of 107 (3 Page(s) Totally)
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