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机构 日期 题名 作者
亞洲大學 201306 Investigation of Substrate Resistance and Inductance on Deep Trench Capacitor for RF Application kumar, Vikash;kumar, Vikash;Aminul, Ashif;Aminulloh, Ashif;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 201306 P-type Shallow Junction as-Implanted Profile Prediction Using Kinetic Monte Carlo Simulation Fra, Antonius;Kur, Erry Dwi;Kurniawan, Erry Dwi;Manjunatha, M;Manjunatha, M.;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 201306 Ron Improvement with Duplex Conduction Channel Manjunatha;Manjunatha;Vasanth;Vasanth;kumar, anil;kumar, anil;Kumar, Jaipal;Kumar, Jaipal;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;陳柏安;P.A.Chen
亞洲大學 201306 Unclamped Inductive Switching Stress Failure Mechanism of LDMOS Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Khau, Chinmoy;Khaund, Chinmoy;Agarw, Neelam;Agarwal, Neelam;Nidhi, Karuna;Nidhi, Karuna;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 201306 Verification of Ruggedness and Failure in LDMOS Chinmoy;Chinmoy;Shreyas;Shreyas;Kumar, Vijay;Kumar, Vijay;Neelam;Neelam;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 201302 Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 201302 Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 2013-10 A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom Kumar, Rahul;Kumar, Rahul;EmitaYulia, H;Hapsari, EmitaYulia;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Anil Kumar, T;
亞洲大學 2013-10 Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD Process Technology Ankit Kumar;Emita Yulia;Emita Yulia Hapsari;Vasanth Kuma;Vasanth Kumar;Aryadeep Mri;Aryadeep Mrinal;許健;Gene Sheu;楊紹明;Shao-Ming Yang;Vivek Ningar
亞洲大學 2013-10 Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep

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