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"許健"的相關文件
顯示項目 26-50 / 107 (共5頁)
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| 亞洲大學 |
201306 |
Investigation of Substrate Resistance and Inductance on Deep Trench Capacitor for RF Application
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kumar, Vikash;kumar, Vikash;Aminul, Ashif;Aminulloh, Ashif;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
201306 |
P-type Shallow Junction as-Implanted Profile Prediction Using Kinetic Monte Carlo Simulation
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Fra, Antonius;Kur, Erry Dwi;Kurniawan, Erry Dwi;Manjunatha, M;Manjunatha, M.;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
201306 |
Ron Improvement with Duplex Conduction Channel
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Manjunatha;Manjunatha;Vasanth;Vasanth;kumar, anil;kumar, anil;Kumar, Jaipal;Kumar, Jaipal;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;陳柏安;P.A.Chen |
| 亞洲大學 |
201306 |
Unclamped Inductive Switching Stress Failure Mechanism of LDMOS
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Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Khau, Chinmoy;Khaund, Chinmoy;Agarw, Neelam;Agarwal, Neelam;Nidhi, Karuna;Nidhi, Karuna;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
201306 |
Verification of Ruggedness and Failure in LDMOS
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Chinmoy;Chinmoy;Shreyas;Shreyas;Kumar, Vijay;Kumar, Vijay;Neelam;Neelam;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
201302 |
Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation
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Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
201302 |
Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator
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Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-10 |
A Novel Ultra High Voltage Sidewall Implant Super Junction MOSFET Using Arsenic Implantation under Trench Bottom
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Kumar, Rahul;Kumar, Rahul;EmitaYulia, H;Hapsari, EmitaYulia;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Anil Kumar, T; |
| 亞洲大學 |
2013-10 |
Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD Process Technology
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Ankit Kumar;Emita Yulia;Emita Yulia Hapsari;Vasanth Kuma;Vasanth Kumar;Aryadeep Mri;Aryadeep Mrinal;許健;Gene Sheu;楊紹明;Shao-Ming Yang;Vivek Ningar |
| 亞洲大學 |
2013-10 |
Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET
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Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep |
| 亞洲大學 |
2013-10 |
Optimization of SiC Schottky Diode using Linear P for Edge Termination
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Mri, Aryadeep;Aryadeep Mrinal, ;Kumar, Vijay;Vijay Kumar M P, ;Vivek N, ;Vivek N, ;Manjunatha, M;Manjunatha M, ;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2013-10 |
Process Integration of Best in Class Specific-on Resistance of 20V to 60V 0.18μm Bipolar CMOS DMOS Technology
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Yulia, Emita;Hapsari, Emita Yulia;Kumar, Rahul;Kumar, Rahul;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Anil, T.V.;Anil, T.V. |
| 亞洲大學 |
2013-06 |
Ron Improvement with Duplex Conduction Channel
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Manjunatha;Manjunatha;Vasanth;Vasanth;kumar, anil;kumar, anil;Kumar, Jaipal;Kumar, Jaipal;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;陳柏安;P.A.Chen |
| 亞洲大學 |
2013-06 |
Verification of Ruggedness and Failure in LDMOS
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Chinmoy;Chinmoy;Shreyas;Shreyas;Kumar, Vijay;Kumar, Vijay;Neelam;Neelam;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-06 |
Investigation in characteristics of 1200V Vertical IGBT for different trench designs
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Anil Kumar, P;Anil Kumar, P;Suresh, Vinay;Vinay Suresh, ;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-05 |
analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region
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Tin, Hua Ting;Ting, Hua Ting;Guo, yu-feng;Guo, yu-feng;ying, yu;ying, yu;許健;Sheu, Gene |
| 亞洲大學 |
2013-02 |
Accurate equivalent circuit model of deep trench capacitor by numerical simulation and analytical calculation
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Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-02 |
Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator
|
Fathna, Ashif;Fathna, Ashif;kumar, Vikash;kumar, Vikash;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2013-01 |
An Analytical Model of Triple RESURF Device with Linear P?layer Doping Profile
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Hua, Tingting;Hua, Tingting;Guo, Yufeng;Guo, Yufeng;Yu, Ying;Yu, Ying;許健;Sheu, Gene;Yao, Jiafei;Yao, Jiafei |
| 亞洲大學 |
2013-01 |
Novel Silicon-on-Insulator Lateral Power Device with Partial Oxide Pillars in the Drift Region
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Yao, JiaFei;Yao, JiaFei;Guo, Yufeng;Guo, Yufeng;Hua, Tingting;Hua, Tingting;Huang, Shi;Huang, Shi;Zh, Changchun;Zhang, Changchun;Xia, Xiaojuan;Xia, Xiaojuan;許健;Sheu, Gene |
| 亞洲大學 |
2012.09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Characterization of NBTI by Evaluation of Hydrogen Amount in the Si/SiO2 Interface
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Mechanism and Improvement of Breakdown Degradation Induced by Interface Charge in UHV
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許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Study of energy capability and failure of LDMOSFET at different ambient temperatures
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許健;Sheu, Gene;許健;Sheu, Gene |
顯示項目 26-50 / 107 (共5頁)
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