|
English
|
正體中文
|
简体中文
|
总笔数 :0
|
|
造访人次 :
51284928
在线人数 :
691
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"deng ic"的相关文件
显示项目 1-10 / 16 (共2页)
1 2 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2019-04-02T06:00:01Z |
Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization
|
Chang, KM; Yeh, TH; Deng, IC |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
|
Chang, KM; Yeh, TH; Deng, IC; Shih, CW |
| 國立交通大學 |
2014-12-08T15:48:44Z |
The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrode
|
Chang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system
|
Chang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment
|
Chang, KM; Deng, IC; Yeh, TH; Shih, CW |
| 國立交通大學 |
2014-12-08T15:46:21Z |
Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film
|
Chang, KM; Deng, IC; Lin, HY |
| 國立交通大學 |
2014-12-08T15:45:58Z |
Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment
|
Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP |
| 國立交通大學 |
2014-12-08T15:45:21Z |
Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application
|
Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP |
| 國立交通大學 |
2014-12-08T15:45:15Z |
A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
|
Chang, KM; Deng, IC; Tsai, YP; Wen, CY; Yeh, SJ; Wang, SW; Wang, JY |
| 國立交通大學 |
2014-12-08T15:43:15Z |
Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
|
Chang, KM; Tseng, MH; Deng, IC; Tsai, YP; Yeh, SJ |
显示项目 1-10 / 16 (共2页)
1 2 > >>
每页显示[10|25|50]项目
|
