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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:34Z |
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
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Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:44:15Z |
Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
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Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:42:55Z |
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
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Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:33Z |
Separation of channel backscattering coefficients in nanoscale MOSFETs
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Chen, MJ; Huang, HT; Chou, YC; Chen, RT; Tseng, YT; Chen, PN; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:36:15Z |
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
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Sheu, YM; Yang, SJ; Wang, CC; Chang, CS; Huang, LP; Huang, TY; Chen, MJ; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:26:27Z |
Temperature dependent channel backscattering coefficients in nanoscale MOSFETs
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Chen, MJ; Huang, HT; Huang, KC; Chen, PN; Chang, CS; Diaz, CH |
Showing items 1-6 of 6 (1 Page(s) Totally)
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