|
English
|
正體中文
|
简体中文
|
总笔数 :2850591
|
|
造访人次 :
44668857
在线人数 :
1122
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"diaz ch"的相关文件
显示项目 1-6 / 6 (共1页)
1
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:44:34Z |
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
|
Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:44:15Z |
Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
|
Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:42:55Z |
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
|
Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:38:33Z |
Separation of channel backscattering coefficients in nanoscale MOSFETs
|
Chen, MJ; Huang, HT; Chou, YC; Chen, RT; Tseng, YT; Chen, PN; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:36:15Z |
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
|
Sheu, YM; Yang, SJ; Wang, CC; Chang, CS; Huang, LP; Huang, TY; Chen, MJ; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:26:27Z |
Temperature dependent channel backscattering coefficients in nanoscale MOSFETs
|
Chen, MJ; Huang, HT; Huang, KC; Chen, PN; Chang, CS; Diaz, CH |
显示项目 1-6 / 6 (共1页)
1
每页显示[10|25|50]项目
|
