臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

	English \| 正體中文 \| 简体中文 \| 2809385
	???header.visitor??? : 26967585 ???header.onlineuser??? : 462 ???header.sponsordeclaration???

???search.scope???

???search.advance???

???search.login???

???search.administrator???

臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

???ui.leftmenu.abouttair???
	???ui.leftmenu.explanation???

???ui.leftmenu.bartitle???
	Repositories
	Author
	Title
	Date
	???ui.leftmenu.statisticschart???
	???ui.leftmenu.realtimefacts???
	???ui.leftmenu.trend???

???index.news???
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

???ui.leftmenu.copyrighttitle???
	???ui.leftmenu.copyrightpublisher???
	???ui.leftmenu.copyrightconference???

???ui.leftmenu.link???
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"e c sun"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1???	???jsp.browse.items-by-author.order2???

Showing items 1-3 of 3 (1 Page(s) Totally)
1
View [10|25|50] records per page

Institution	Date	Title	Author
臺大學術典藏	2018-09-10T04:59:03Z	A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects	E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:19Z	Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect	M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect	J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO

Showing items 1-3 of 3 (1 Page(s) Totally)
1
View [10|25|50] records per page