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Institution Date Title Author
國立成功大學 2021-12 Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer Jian;Jhang-Jie;Lee;Hsin-Ying;Chang;Edward-Yi;Lee;Ching-Ting
國立交通大學 2014-12-16T06:14:30Z Copper metalized ohmic contact electrode of compound device Lee; Cheng-Shih; Chang; Edward Yi; Chen; Ke-Shian
國立交通大學 2014-12-16T06:14:29Z Cu-metalized compound semiconductor device Chang; Edward Yi; Shang-Wen; Lee; Cheng-Shih
國立交通大學 2014-12-16T06:14:23Z Structure of high electron mobility transistor, a device comprising the structure and a method of producing the same Chang; Edward Yi.; Wu; Yun-Chi; Lin; Yueh-Chin
國立交通大學 2014-12-16T06:14:22Z Interconnect of group III-V semiconductor device and fabrication method for making the same Lee; Cheng-Shih; Chang; Edward Yi; Huang-Choung
元智大學 2010-12 Logic Performance of 40 nm InAslInxGat_xAs Composite Channel HEMTs Faiz Aizad; Heng-Tung Hsu; Chien-I Kuo; Li-Han Hsu; Chien-Ying Wu; Edward Yi; Guo-Wei Huang; Szu-ping Tsai
元智大學 2010-12 Logic Performance of 40 nm InAslInxGat_xAs Composite Channel HEMTs Faiz Aizad; Heng-Tung Hsu; Chien-I Kuo; Li-Han Hsu; Chien-Ying Wu; Edward Yi; Guo-Wei Huang; Szu-ping Tsai
元智大學 2010-12 Logic Performance of 40 nm InAslInxGat_xAs Composite Channel HEMTs Faiz Aizad; Heng-Tung Hsu; Chien-I Kuo; Li-Han Hsu; Chien-Ying Wu; Edward Yi; Guo-Wei Huang; Szu-ping Tsai

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