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Institution Date Title Author
國立臺灣大學 1998 A study of porous silicon prepared under different HF concentrations by positron annihilation Huang, C. C.; Chang, I. M.; Huang, J. H.; Fan, J. C.; Chen, Y. F.; Tseng, P. K.
國立臺灣大學 1998 Study of persistent photoconductivity in semimetallic Al0.2Ga0.8Sb/InAs quantum wells Tsai, L. C.; Fan, J. C.; Chen, Y. F.; Lo, Ikai
國立臺灣大學 1998 Observation of Coulomb Staircases in Arsenic Precipitates in Low-Temperature Grown GaAs Fan, J. C.; Yong, B. L.; Yang, Y. C.; Chen, Y. F.; Lee, W. C.; Hsu, T. M.
國立臺灣大學 1998 Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence Dai, Y. T.; Fan, J. C.; Chen, Y. F.
國立臺灣大學 1997-08 Compositional Dependence of the Conduction-Band Effective Mass of InGaAsP Lattice Matched to InP Fan, J.C.; Chen, Y.F.; Liu, J.S.; Lin, H.H.
國立臺灣大學 1996 Study of the photoluminescence instability of porous silicon under light illumination Chang, I. M.; Fan, J. C.; Chen, Y. F.

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