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Taiwan Academic Institutional Repository >
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"feng ms"
Showing items 46-70 of 118 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations
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Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:24Z |
Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni
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Chao, CW; Wu, YCS; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
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Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Roles of copper mechanical characteristics in electropolishing
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Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
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Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
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Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
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Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Study of Schottky barriers on n-type GaN grown by LP-MOCVD
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Guo, JD; Feng, MS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors
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Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
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Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:24Z |
Modified double-layer PECVD passivation films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS; Chang, YF |
| 國立交通大學 |
2014-12-08T15:27:17Z |
ULSI multi-layer thin film passivation processes for improving cache memory performance
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Lin, CF; Tseng, WT; Feng, MS; Chang, YF; Hsu, JJ |
| 國立交通大學 |
2014-12-08T15:27:11Z |
A study on electrochemical metrologies for evaluating the removal selectivity of AlCMP
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Chiu, SY; Hsu, JW; Tung, IC; Shih, HC; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Study of a common deep level in GaN
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Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS |
| 國立交通大學 |
2014-12-08T15:27:05Z |
Study on chemical-mechanical polishing of low dielectric constant polyimide thin films
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Tai, YL; Tsai, MS; Tung, IC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
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Shieh, JM; Suen, SC; Lin, KC; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:54Z |
AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etch
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Huang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:53Z |
AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescence
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Fang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:17Z |
Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
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Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS |
| 國立交通大學 |
2014-12-08T15:19:18Z |
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
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Chiu, SY; Wang, YL; Chang, SC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
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Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
Showing items 46-70 of 118 (5 Page(s) Totally)
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