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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:40:54Z Superpolishing for planarizing copper damascene interconnects Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL
國立交通大學 2014-12-08T15:40:39Z Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS
國立交通大學 2014-12-08T15:40:24Z Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni Chao, CW; Wu, YCS; Hu, GR; Feng, MS
國立交通大學 2014-12-08T15:40:06Z The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT
國立交通大學 2014-12-08T15:39:57Z Roles of copper mechanical characteristics in electropolishing Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:39:44Z Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:43Z Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:16Z Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:38:56Z Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:37:09Z Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS

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