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Institution Date Title Author
國立交通大學 2019-04-02T05:59:24Z Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM
國立交通大學 2019-04-02T05:59:22Z The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection Wang, YL; Liu, C; Feng, MS; Tseng, WT
國立交通大學 2019-04-02T05:59:14Z EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY LEE, WI; HUANG, TC; GUO, JD; FENG, MS
國立交通大學 2019-04-02T05:59:14Z A modified multi-chemicals spray cleaning process for post-CMP cleaning application Wang, YL; Liu, C; Feng, MS; Tseng, WT
國立交通大學 2019-04-02T05:59:13Z SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS
國立交通大學 2019-04-02T05:58:48Z Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement Wang, YL; Tseng, WT; Feng, MS
國立交通大學 2019-04-02T05:58:40Z Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance Lin, CF; Tseng, WT; Feng, MS
國立交通大學 2019-04-02T05:58:30Z Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS
國立交通大學 2019-04-02T05:58:30Z Reactive ion etching of GaN with BCl3/SF6 plasmas Feng, MS; Guo, JD; Lu, YM; Chang, EY
國立交通大學 2014-12-08T15:49:07Z Growth of MgWO4 phosphor by RF magnetron sputtering Chu, JP; Hsieh, IJ; Chen, JT; Feng, MS

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