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"feng ms"的相关文件
显示项目 6-30 / 118 (共5页)
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| 國立交通大學 |
2019-04-02T05:59:24Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2019-04-02T05:59:22Z |
The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
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Wang, YL; Liu, C; Feng, MS; Tseng, WT |
| 國立交通大學 |
2019-04-02T05:59:14Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2019-04-02T05:59:14Z |
A modified multi-chemicals spray cleaning process for post-CMP cleaning application
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Wang, YL; Liu, C; Feng, MS; Tseng, WT |
| 國立交通大學 |
2019-04-02T05:59:13Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2019-04-02T05:58:48Z |
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
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Wang, YL; Tseng, WT; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:40Z |
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
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Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Growth of MgWO4 phosphor by RF magnetron sputtering
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Chu, JP; Hsieh, IJ; Chen, JT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:47:22Z |
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:44Z |
Optimization of multilayer thin film passivation processes for improving cache memory device performance
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:40Z |
Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish
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Lin, CF; Tseng, WT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:28Z |
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
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Lin, CF; Tseng, WT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide
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Chen, YC; Yang, MZ; Tung, IC; Chen, MP; Feng, MS; Cheng, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
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Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:08Z |
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
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Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:46:07Z |
Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory
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Lin, CF; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:45:24Z |
Improved contact performance of GaN film using Si diffusion
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Lin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS |
| 國立交通大學 |
2014-12-08T15:44:44Z |
Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition
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Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
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Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:39Z |
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
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Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:22Z |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
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Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films
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Chao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS |
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