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Institution Date Title Author
國立交通大學 2014-12-08T15:03:37Z A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M WANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC
國立交通大學 2014-12-08T15:03:23Z EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE FENG, MS; LIANG, CW
國立交通大學 2014-12-08T15:03:20Z CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS) TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC
國立交通大學 2014-12-08T15:03:12Z SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS
國立交通大學 2014-12-08T15:03:10Z EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY LEE, WI; HUANG, TC; GUO, JD; FENG, MS
國立交通大學 2014-12-08T15:03:09Z SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES KU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC
國立交通大學 2014-12-08T15:03:09Z RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS KUO, HR; FENG, MS; GUO, JD; LEE, MC
國立交通大學 2014-12-08T15:03:08Z SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GUO, JD; FENG, MS; PAN, FM
國立交通大學 2014-12-08T15:03:07Z STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY
國立交通大學 2014-12-08T15:03:05Z Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistors Liang, CW; Chiang, WC; Feng, MS

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