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"feng ms"的相關文件
顯示項目 86-110 / 118 (共5頁)
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| 國立交通大學 |
2014-12-08T15:03:37Z |
A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
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WANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:23Z |
EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE
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FENG, MS; LIANG, CW |
| 國立交通大學 |
2014-12-08T15:03:20Z |
CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)
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TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:12Z |
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:10Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:09Z |
SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES
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KU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:09Z |
RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS
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KUO, HR; FENG, MS; GUO, JD; LEE, MC |
| 國立交通大學 |
2014-12-08T15:03:08Z |
SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; PAN, FM |
| 國立交通大學 |
2014-12-08T15:03:07Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:05Z |
Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin-film transistors
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Liang, CW; Chiang, WC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:03:04Z |
BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
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FENG, MS; FANG, CSA; CHEN, HD |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:54Z |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
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Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT |
| 國立交通大學 |
2014-12-08T15:02:51Z |
Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
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Liang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
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Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:38Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:35Z |
Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layers
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Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:34Z |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
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Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH |
| 國立交通大學 |
2014-12-08T15:02:34Z |
X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
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Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
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Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
| 國立交通大學 |
2014-12-08T15:02:31Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:02:26Z |
Schottky contact and the thermal stability of Ni on n-type GaN
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Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:58Z |
Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
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Tseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:01:57Z |
Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
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Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
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Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
顯示項目 86-110 / 118 (共5頁)
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