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機構 日期 題名 作者
國立交通大學 2014-12-08T15:46:11Z The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY
國立交通大學 2014-12-08T15:46:08Z Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS
國立交通大學 2014-12-08T15:46:07Z Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory Lin, CF; Tung, IC; Feng, MS
國立交通大學 2014-12-08T15:45:24Z Improved contact performance of GaN film using Si diffusion Lin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS
國立交通大學 2014-12-08T15:44:44Z Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC
國立交通大學 2014-12-08T15:44:34Z Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS
國立交通大學 2014-12-08T15:43:54Z Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP
國立交通大學 2014-12-08T15:43:39Z Selective copper metallization by electrochemical contact displacement with amorphous silicon film Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:43:22Z X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG
國立交通大學 2014-12-08T15:42:48Z Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films Chao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS
國立交通大學 2014-12-08T15:42:47Z Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC
國立交通大學 2014-12-08T15:42:45Z The removal selectivity of titanium and aluminum in chemical mechanical planarization Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC
國立交通大學 2014-12-08T15:42:28Z Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS
國立交通大學 2014-12-08T15:42:19Z Reduction of resistivity of electroplated copper by rapid thermal annealing Chang, SC; Shieh, JM; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:42:17Z A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy Fang, CY; Lin, CF; Chang, EY; Feng, MS
國立交通大學 2014-12-08T15:42:14Z Wetting effect on gap filling submicron damascene by an electrolyte free of levelers Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP
國立交通大學 2014-12-08T15:42:09Z Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization Shieh, JM; Chang, SC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:42:01Z The effect of plating current densities on self-annealing Behaviors of electroplated copper films Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH
國立交通大學 2014-12-08T15:42:00Z Microleveling mechanisms and applications of electropolishing on planarization of copper metallization Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS
國立交通大學 2014-12-08T15:41:49Z Leveling effects of copper electrolytes with hybrid-mode additives Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH
國立交通大學 2014-12-08T15:41:48Z Investigation of carrying agents on microstructure of electroplated Cu films Shieh, JM; Chang, SC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:41:47Z Investigations of pulse current electrodeposition for damascene copper metals Chang, SC; Shieh, JM; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:41:39Z Pattern effects on planarization efficiency of Cu electropolishing Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:41:17Z Improving the quality of electroplated copper films by rapid thermal annealing Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL
國立交通大學 2014-12-08T15:41:08Z Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si Chao, CW; Wu, YCS; Hu, GR; Feng, MS

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