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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:46:11Z The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY
國立交通大學 2014-12-08T15:46:08Z Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS
國立交通大學 2014-12-08T15:46:07Z Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memory Lin, CF; Tung, IC; Feng, MS
國立交通大學 2014-12-08T15:45:24Z Improved contact performance of GaN film using Si diffusion Lin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS
國立交通大學 2014-12-08T15:44:44Z Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC
國立交通大學 2014-12-08T15:44:34Z Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS
國立交通大學 2014-12-08T15:43:54Z Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP
國立交通大學 2014-12-08T15:43:39Z Selective copper metallization by electrochemical contact displacement with amorphous silicon film Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS
國立交通大學 2014-12-08T15:43:22Z X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG
國立交通大學 2014-12-08T15:42:48Z Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films Chao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS

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