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机构 日期 题名 作者
國立交通大學 2014-12-08T15:39:44Z Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:43Z Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS
國立交通大學 2014-12-08T15:39:16Z Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:38:56Z Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS
國立交通大學 2014-12-08T15:37:09Z Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS
國立交通大學 2014-12-08T15:36:01Z Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS
國立交通大學 2014-12-08T15:27:44Z Study of Schottky barriers on n-type GaN grown by LP-MOCVD Guo, JD; Feng, MS; Pan, FM
國立交通大學 2014-12-08T15:27:44Z Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors Tai, YH; Su, FC; Feng, MS; Cheng, HC
國立交通大學 2014-12-08T15:27:43Z Fabrication and characterization of the Pd-silicided emitters for field-emission devices Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC
國立交通大學 2014-12-08T15:27:24Z Modified double-layer PECVD passivation films for improving nonvolatile memory IC performance Lin, CF; Tseng, WT; Feng, MS; Chang, YF

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