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"feng ms"的相關文件
顯示項目 51-60 / 118 (共12頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
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Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide
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Cheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
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Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Study of Schottky barriers on n-type GaN grown by LP-MOCVD
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Guo, JD; Feng, MS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors
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Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
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Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:24Z |
Modified double-layer PECVD passivation films for improving nonvolatile memory IC performance
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Lin, CF; Tseng, WT; Feng, MS; Chang, YF |
顯示項目 51-60 / 118 (共12頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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