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"feng ms"的相關文件
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| 國立交通大學 |
2014-12-08T15:03:04Z |
BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
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FENG, MS; FANG, CSA; CHEN, HD |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:54Z |
A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
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Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT |
| 國立交通大學 |
2014-12-08T15:02:51Z |
Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
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Liang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
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Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:38Z |
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
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Wang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:02:35Z |
Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layers
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Tai, YH; Su, FC; Feng, MS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:34Z |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
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Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH |
| 國立交通大學 |
2014-12-08T15:02:34Z |
X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
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Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
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Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS |
顯示項目 96-105 / 118 (共12頁)
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