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Showing items 1-10 of 13 (2 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:52Z |
Rational function approximation of nuclear scattering cross-section function
|
Wang, SS; Guo, SF |
| 國立交通大學 |
2019-04-02T05:59:28Z |
New techniques for simulation of ion implantation by numerical integration of Boltzmann transport equation
|
Wang, SW; Guo, SF |
| 國立交通大學 |
2014-12-08T15:48:56Z |
Parallel simulation of ion implantation for multi-component targets using Boltzmann transport equation
|
Wang, SW; Guo, SF |
| 國立交通大學 |
2014-12-08T15:06:30Z |
REDISTRIBUTION OF DEPOSITED BORON IN SILICON DURING DRY O2 AND TCE O2 OXIDATIONS
|
GUO, SF; CHU, TY |
| 國立交通大學 |
2014-12-08T15:06:29Z |
A SIMPLE-MODEL FOR THE DEPOSITION OF BORON IN SILICON BY USING A BN DIFFUSION SOURCE
|
GUO, SF |
| 國立交通大學 |
2014-12-08T15:06:25Z |
A MODEL FOR THE DEPOSITION OF PHOSPHORUS IN SILICON
|
GUO, SF |
| 國立交通大學 |
2014-12-08T15:06:23Z |
NUMERICAL-ANALYSIS OF SILICON SCHOTTKY-BARRIER CONTACTS
|
GUO, SF |
| 國立交通大學 |
2014-12-08T15:06:23Z |
A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE
|
GUO, SF; CHEN, WS |
| 國立交通大學 |
2014-12-08T15:06:17Z |
A SIMPLE-MODEL FOR COMPUTER-SIMULATION OF SCHOTTKY-BARRIER DIODES
|
GUO, SF |
| 國立交通大學 |
2014-12-08T15:05:36Z |
SIMPLIFICATION OF THE ICCG METHOD FOR MATRIX-INVERSION IN SEMICONDUCTOR-DEVICE SIMULATION
|
GUO, SF |
Showing items 1-10 of 13 (2 Page(s) Totally)
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