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Showing items 1-12 of 12  (1 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1989 Material Properties of InP-on-Si Grown by Low-Pressure Organometallic Vapor Phase Epitaxy D.S. Wuu; H.H. Tung; R.H. Horng; M.K. Lee
國立中山大學 1988 Growth and Characterization of InP Epilayers on ZnSe-coated Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee; D.S. Wuu; H.H. Tung; J.H. Chang; Y.F. Lin
國立中山大學 1988 Heteroepitaxial Growth of Indium Phosphide on Silicon by MOCVD Using Adduct Source M.K. Lee; D.S. We; H.H. Tung
國立中山大學 1988 Characterization of InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Chemical Vapor Phase Epitaxy M.K. Lee; D.S. Wuu; H.H. Tung; K.Y. Yu; K.C. Huang
國立中山大學 1988 MOCVD Growth of InP on Si by Using a GaAs Buffer Layer M.K. Lee;D.S. Wuu;H.H. Tung;K.Y. Yu;K.C. Huang
國立中山大學 1988 Organometallic growth and Material Properties of InP-on-Si M.K. Lee;D.S. Wuu;H.H. Tung;R.H. Horng;K.C. Huang
國立中山大學 1987 Low Pressure Metalorganic Vapor Phase Epitaxy of InP Using a Trimethylindium- Trimethylphosphine Adduct Source M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學 1987 Heteroepitaxial Growth of InP on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學 1987 Epitaxial Growth of Indium Phosphide on GaAs by Low Pressure Metalorganic Chemical Vapor Deposition M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學 1987 Heteroepitaxial Growth of InP Directly on Si by Low Pressure Metalorganic Chemical Vapor Depositions M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學 1987 Vapor Phase Epitaxy of Indium Phosphide Using Metalorganic Adduct Compound M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學 1987 InP Epitaxial Growth by Low Pressure Metalorganic Chemical Vapor Deposition Using Adduct Source M.K. Lee;D.S. Wu;H.H. Tung

Showing items 1-12 of 12  (1 Page(s) Totally)
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