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Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:47Z	Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics	Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:47Z	III-V MOSFET's with advanced high 庥 dielectrics	Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:46Z	Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures	MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.
臺大學術典藏	2019-12-27T07:49:45Z	Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant	Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:45Z	A novel approach of using a MBE template for ALD growth of high-庥 dielectrics	Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O2 films	Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN	Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering	Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics	Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation	MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)	Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters	Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As	MINGHWEI HONG; Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J.
臺大學術典藏	2019-12-27T07:49:40Z	Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics	Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition	Pan, C.H.;Kwo, J.;Lee, K.Y.;Lee, W.C.;Chu, L.K.;Huang, M.L.;Lee, Y.J.;Hong, M.; Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:38Z	Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs	Huang, M.L.;Chang, Y.C.;Chang, Y.H.;Lin, T.D.;Kwo, J.;Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:38Z	InGaAs metal oxide semiconductor devices with Ga2O 3(Gd2O3) High-庥 dielectrics for science and technology beyond Si CMOS	Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge	Chu, L.K.;Lee, W.C.;Huang, M.L.;Chang, Y.H.;Tung, L.T.;Chang, C.C.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS	Lin, T.D.;Chang, P.;Chiu, H.C.;Chang, Y.C.;Lin, C.A.;Chang, W.H.;Lee, Y.J.;Chang, Y.H.;Huang, M.L.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices	Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Advances on III-V MOSFET for science and technology beyond Si CMOS	Kwo, J.;Lin, T.D.;Huang, M.L.;Chang, P.;Lee, Y.J.;Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	High performance Ga2O3(Gd2O 3)/Ge MOS devices without interfacial layers	Chu, L.K.;Chu, R.L.;Huang, M.L.;Tung, L.T.;Lin, T.D.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)	Lee, Y.J.;Lee, W.C.;Huang, M.L.;Wu, S.Y.;Nieh, C.W.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Nanometer-thick single-crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology	Chang, W.H.;Lee, C.H.;Chang, Y.C.;Chang, P.;Huang, M.L.;Lee, Y.J.;Hsu, C.-H.;Hong, J.M.;Tsai, C.C.;Kwo, J.R.;Hong, M.; Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:33Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers	Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:33Z	Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2	Chang, P.;Lee, W.C.;Huang, M.L.;Lee, Y.J.;Hong, M.;Kwo, J.; Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:31Z	InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS	Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.;Lee, W.C.;Chang, P.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:30Z	High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 (Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation	Pi, T.-W.;Huang, M.L.;Lee, W.C.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:29Z	Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs	Chang, Y.H.;Huang, M.L.;Chang, P.;Lin, C.A.;Chu, Y.J.;Chen, B.R.;Hsu, C.L.;Kwo, J.;Pi, T.W.;Hong, M.; Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:29Z	Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n-Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study	Pi, T.-W.;Lee, W.C.;Huang, M.L.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:27Z	Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics	Chang, Y.C.;Huang, M.L.;Chang, Y.H.;Lee, Y.J.;Chiu, H.C.;Kwo, J.;Hong, M.; Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:27Z	In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-4 ? 6 surface	Chang, Y.H.;Huang, M.L.;Chang, P.;Shen, J.Y.;Chen, B.R.;Hsu, C.L.;Pi, T.W.;Hong, M.;Kwo, J.; Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:27Z	Direct measurement of interfacial structure in epitaxial Gd 2O3 on GaAs (0 0 1) using scanning tunneling microscopy	Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; MINGHWEI HONG; Huang, B.C.; Chiu, Y.P.; Shih, M.C.; Chiu, Y.P.;Shih, M.C.;Huang, B.C.;Shen, J.Y.;Huang, M.L.;Lee, W.C.;Chang, P.;Chiang, T.H.;Hong, M.;Kwo, J.
臺大學術典藏	2019-12-27T07:49:25Z	Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.;Huang, B.C.;Shih, M.C.;Shen, J.Y.;Chang, P.;Chang, C.S.;Huang, M.L.;Tsai, M.-H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:25Z	Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics	Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:24Z	Surface-atom core-level shift in GaAs(111)A-2	MINGHWEI HONG; Kwo, J.; Hong, M.; Wertheim, G.K.; Chiang, T.-H.; Huang, M.-L.; Chen, B.-R.; Pi, T.-W.
臺大學術典藏	2019-12-27T07:49:24Z	Realization of high-quality HfO 2 on In 0.53Ga 0.47As by in-situ atomic-layer-deposition	Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:23Z	Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors	Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:23Z	Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition	Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG; Lin, C.A.; Chang, Y.H.; Chang, Y.H.;Lin, C.A.;Liu, Y.T.;Chiang, T.H.;Lin, H.Y.;Huang, M.L.;Lin, T.D.;Pi, T.W.;Kwo, J.;Hong, M.
臺大學術典藏	2019-12-27T07:49:20Z	Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)	Chu, R.L.;Liu, Y.C.;Lee, W.C.;Lin, T.D.;Huang, M.L.;Pi, T.W.;Kwo, J.;Hong, M.; Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019	A leadership-based program can reduce boarding time of emergency department admissions	WAN-CHING LIEN; Liu Y.-P.; Chen I.-S.; Huang M.-L.; Wang H.-N.; Hung K.-Y.; Sun J.-S.; Sun J.-S.;Hung K.-Y.;Wang H.-N.;Huang M.-L.;Chen I.-S.;Liu Y.-P.;WAN-CHING LIEN
臺大學術典藏	2018-09-10T08:43:14Z	Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0 0 1) using scanning tunneling microscopy	Chiu, Y.P.;Shih, M.C.;Huang, B.C.;Shen, J.Y.;Huang, M.L.;Lee, W.C.;Chang, P.;Chiang, T.H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; YA-PING CHIU
臺大學術典藏	2018-09-10T07:28:30Z	Grey forecasting run-to-run control system in copper chemical mechanical polishing	Wang, G. J.; Yang, F. C.; Wang, M. T.; Huang, M. L.; Chen, J.; Loh, K. N.; FENG-CHENG YANG; Wang, G. J.; Yang, F. C.; Wang, M. T.; Huang, M. L.; Chen, J.; Loh, K. N.
臺大學術典藏	2018-09-10T07:23:47Z	Abnormal liver function in workers exposed to low levels of ethylene dichloride and vinyl chloride monomer	Cheng, T.-J.;Huang, M.-L.;You, N.-C.;Du, C.-L.;Chau, T.-T.; TSUN-JEN CHENG
臺大學術典藏	2018-09-10T03:24:03Z	Increased lymphocyte sister chromatid exchange frequency in workers with exposure to low level of ethylene dichloride	Cheng, T.-J.;Chou, P.-Y.;Huang, M.-L.;Du, C.-L.;Wong, R.-H.;Chen, P.-C.; Pau-Chung CHEN; TSUN-JEN CHENG; Chung Li Du
國立臺灣科技大學	2015	Application of data quality indicator of carbon footprint and water footprint	Kuo, T.C.;Huang, M.-L.;Hsu, C.W.;Lin, C.J.;Hsieh, C.-C.;Chu, C.-H.
國立成功大學	2014-04	High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations	Wang, C. H.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L. -E.; Droopad, R.; Passlack, M.; Diaz, C. H.
國立臺灣科技大學	2012	Role of p21 as a determinant of 1,6-Bis[4-(4-amino-3-hydroxyphenoxy)phenyl] diamantane response in human HCT-116 colon carcinoma cells	Wang, J.-J.;Hung, H.-F.;Huang, M.-L.;Lee, H.-J.;Chern, Y.-T.;Chang, Y.-F.;Chi, C.-W.;Hsu, Y.-C.
國立臺灣科技大學	2012	A grey weighting density-based clustering algorithm for LAO wafer defect inspection	Huang, M.-L.;Tsai, M.-J.;Chen, C.C.;Lin, S.C.;Lin, Z.C.
國立臺灣大學	2012	Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition	Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.

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