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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:54:14Z |
A study of electromigration behaviors of Ge2Sb2Te5 chalcogenide nano-strips subjected to pulse bias
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Huang, Yin-Hsien; Hsieh, Tsung-Eong |
| 國立交通大學 |
2018-08-21T05:53:49Z |
Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier's law of heat conduction at steady-state
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Wu, Chia-Yu; Huang, Yin-Hsien; Wu, Hsin-Han; Hsieh, Tsung-Eong |
| 國立交通大學 |
2015-11-26T01:06:55Z |
以3ω法量測相變化薄膜熱傳導性質與其交流阻抗特性之研究
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黃胤諴; Huang, Yin-Hsien; 謝宗雍; Hsieh, Tsung-Eong |
| 國立交通大學 |
2015-11-26T00:55:36Z |
硫族合金薄膜之電遷移行為及其熱性質對相變化記憶體操作性質之研究
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黃胤諴; Huang, Yin-Hsien; 謝宗雍; Hsieh, Tsung-Eong |
| 國立交通大學 |
2015-07-21T08:29:44Z |
Effective thermal parameters of chalcogenide thin films and simulation of phase-change memory
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Huang, Yin-Hsien; Hsieh, Tsung-Eong |
| 國立交通大學 |
2015-07-21T08:28:58Z |
Forming-free, bi-directional polarity conductive-bridge memory devices with Ge2Sb2Te5 solid-state electrolyte and Ag active electrode
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Huang, Yin-Hsien; Chen, Hsuan-An; Wu, Hsin-Han; Hsieh, Tsung-Eong |
| 國立交通大學 |
2014-12-08T15:32:14Z |
Electromigration behaviors of Ge2Sb2Te5 chalcogenide thin films under DC bias
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Huang, Yin-Hsien; Hang, Chi-Hang; Huang, Yu-Jen; Hsieh, Tsung-Eong |
| 國立交通大學 |
2014-12-08T15:23:34Z |
A study of phase transition behaviors of chalcogenide layers using in situ alternative-current impedance spectroscopy
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Huang, Yin-Hsien; Huang, Yu-Jen; Hsieh, Tsung-Eong |
Showing items 1-8 of 8 (1 Page(s) Totally)
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