臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
臺大學術典藏	2021-09-02T00:05:24Z	Modeling power vertical high-k MOS device with interface charges via superposition methodology-breakdown voltage and specific ON-resistance	Wang Z;Wang X;Kuo J.B.; Wang Z; Wang X; Kuo J.B.; JAMES-B KUO
臺大學術典藏	2021-09-02T00:05:24Z	On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs	Hong C;Kuo J.B;Chen Y.; Hong C; Kuo J.B; Chen Y.; JAMES-B KUO
臺大學術典藏	2021-09-02T00:05:23Z	A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device	Wang B;Wang Z;Kuo J.B.; Wang B; Wang Z; Kuo J.B.; JAMES-B KUO
臺大學術典藏	2021-09-02T00:05:23Z	A Unified Continuous and Discrete Model for Double-Gate MOSFETs with Spatially Varying or Pulsed Doping Profiles	Hong C;Zhou J;Cheng Q;Zhu K;Kuo J.B;Chen Y.; Hong C; Zhou J; Cheng Q; Zhu K; Kuo J.B; Chen Y.; JAMES-B KUO
臺大學術典藏	2021-09-02T00:05:23Z	Author's Reply to "comments on 'A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs'"	Hong C;Zhou J;Wang R;Huang J;Bai W;Kuo J.B;Chen Y.; Hong C; Zhou J; Wang R; Huang J; Bai W; Kuo J.B; Chen Y.; JAMES-B KUO
臺大學術典藏	2021-09-02T00:05:23Z	Modeling of Breakdown Voltage for SOI Trench LDMOS Device Based on Conformal Mapping	Wang Y;Wang Z;Bai T;Kuo J.B.; Wang Y; Wang Z; Bai T; Kuo J.B.; JAMES-B KUO
臺大學術典藏	2021-09-02T00:05:22Z	A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs	Hong C;Zhou J;Huang J;Wang R;Bai W;Kuo J.B;Chen Y.; Hong C; Zhou J; Huang J; Wang R; Bai W; Kuo J.B; Chen Y.; JAMES-B KUO
臺大學術典藏	2018-09-10T05:18:26Z	A hierarchical and multi-model based algorithm for lead detection and news program narrative parsing	Kuo, J.-H.; Kuo, J.-B.; Chen, H.-W.; Wu, J.-L.; JA-LING WU
國立臺灣大學	2010	Shallow Trench Isolation-Related Narrow Channel Effect on the Kink Effect Behavior of 40nm PD SOI NMOS Device	Hung, H. J.; Kuo, J. B.; Chen, D.; Tsai, C. T.; Yeh, C. S.
臺大學術典藏	2010	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	CHIH-HAO CHEN; Kuo J.B.; Chen D.; Yeh C.S.

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