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Institution Date Title Author
臺大學術典藏 2018-09-10T07:41:14Z Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:13Z InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:30Z Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:35:07Z Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers L. W. Sung; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:35:06Z Band Gap Reduction in InAsN Alloys D. K. Shih; H. H. Lin; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:14:56Z Femtosecond carrier dynamics in InGaAsN single quantum well L. W. Sung,; H. H. Lin,; B. R. Wu,; N. T. Yeh,; HAO-HSIUNG LIN; T. M. Liu,; M. C. Tien,; J. W. Shi,; C. K. Sun,
臺大學術典藏 2018-09-10T04:14:56Z 1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:14:55Z Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:04Z Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:02Z Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN

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