|
English
|
正體中文
|
简体中文
|
总笔数 :0
|
|
造访人次 :
50696158
在线人数 :
335
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"l w sung"的相关文件
显示项目 1-10 / 12 (共2页)
1 2 > >>
每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers
|
C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers
|
L. W. Sung; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:06Z |
Band Gap Reduction in InAsN Alloys
|
D. K. Shih; H. H. Lin; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
Femtosecond carrier dynamics in InGaAsN single quantum well
|
L. W. Sung,; H. H. Lin,; B. R. Wu,; N. T. Yeh,; HAO-HSIUNG LIN; T. M. Liu,; M. C. Tien,; J. W. Shi,; C. K. Sun, |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy
|
J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN |
显示项目 1-10 / 12 (共2页)
1 2 > >>
每页显示[10|25|50]项目
|
