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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"lei tf"的相关文件
显示项目 31-40 / 214 (共22页) << < 1 2 3 4 5 6 7 8 9 10 > >> 每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:44:15Z |
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:05Z |
High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
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Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:02Z |
Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
|
Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:00Z |
High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
|
Lee, JW; Lee, CL; Lei, TF; Lai, CS |
| 國立交通大學 |
2014-12-08T15:43:52Z |
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Wen, HC; Chao, TS |
| 國立交通大學 |
2014-12-08T15:43:50Z |
One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaning
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Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Ko, FH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:47Z |
Focus measurement with a simple pattern design
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Ku, CY; Lei, TF; Lin, HK |
| 國立交通大學 |
2014-12-08T15:43:39Z |
High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
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Yang, WL; Chao, TS; Cheng, CM; Pan, TM; Lei, TF |
| 國立交通大學 |
2014-12-08T15:43:37Z |
The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films
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Lee, JW; Chen, WD; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Expanding the process window and reducing the optical proximity effect by post-exposure delay
|
Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF |
显示项目 31-40 / 214 (共22页) << < 1 2 3 4 5 6 7 8 9 10 > >> 每页显示[10|25|50]项目
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