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"lei tf"的相關文件
顯示項目 16-40 / 214 (共9頁)
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| 國立交通大學 |
2014-12-08T15:47:36Z |
Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
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Lai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:44Z |
Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gate
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Chang, TY; Lei, TF; Chao, TS; Huang, CT; Chen, SK; Tuan, A; Chou, S |
| 國立交通大學 |
2014-12-08T15:46:40Z |
Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process
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Lei, TF; Chen, JH; Wang, MF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:46:12Z |
A novel Si-B diffusion source for p(+)-poly-Si gate
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Chao, TS; Kuo, CP; Chen, TP; Lei, TF |
| 國立交通大學 |
2014-12-08T15:46:06Z |
Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
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Hou, TH; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:45:23Z |
Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning
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Chen, JH; Lei, TF; Chao, TS; Su, TP; Huang, SJ; Tuan, A; Chen, SK |
| 國立交通大學 |
2014-12-08T15:45:12Z |
Improvement of polysilicon oxide integrity using NF3-annealing
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Yang, WL; Shieh, MS; Chen, YM; Chao, TS; Liu, DG; Lei, TF |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Novel cleaning solutions for polysilicon film post chemical mechanical polishing
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Pan, TM; Lei, TF; Chen, CC; Chao, TS; Liaw, MC; Yang, WL; Tsai, MS; Lu, CP; Chang, WH |
| 國立交通大學 |
2014-12-08T15:45:01Z |
Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:45:00Z |
Characteristics of polysilicon oxides combining N2O nitridation and CMP processes
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Lei, TF; Chen, JH; Wang, MF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:51Z |
High quality ultrathin CoTiO3 high-k gate dielectrics
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Pan, TM; Lei, TF; Chao, TS; Chang, KL; Hsieh, KC |
| 國立交通大學 |
2014-12-08T15:44:48Z |
Postexposure delay effect on linewidth variation in base added chemically amplified resist
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Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:47Z |
Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology
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Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Lu, CP |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing
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Chen, JH; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:20Z |
A novel thin-film transistor with self-aligned field induced drain
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Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:15Z |
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:05Z |
High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
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Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:02Z |
Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
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Pan, TM; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:00Z |
High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
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Lee, JW; Lee, CL; Lei, TF; Lai, CS |
| 國立交通大學 |
2014-12-08T15:43:52Z |
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
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Pan, TM; Lei, TF; Wen, HC; Chao, TS |
| 國立交通大學 |
2014-12-08T15:43:50Z |
One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaning
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Pan, TM; Lei, TF; Chao, TS; Liaw, MC; Ko, FH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:47Z |
Focus measurement with a simple pattern design
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Ku, CY; Lei, TF; Lin, HK |
| 國立交通大學 |
2014-12-08T15:43:39Z |
High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
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Yang, WL; Chao, TS; Cheng, CM; Pan, TM; Lei, TF |
| 國立交通大學 |
2014-12-08T15:43:37Z |
The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films
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Lee, JW; Chen, WD; Lei, TF; Lee, CL |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Expanding the process window and reducing the optical proximity effect by post-exposure delay
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Ku, CY; Shieh, JM; Chiou, TB; Lin, HK; Lei, TF |
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