| 國立交通大學 |
2017-04-21T06:56:38Z |
Step buffer layer of Al0.25Ga0.75N/Al0.08Ga0.92N on P-InAlN gate normally-off high electron mobility transistors
|
Shrestha, Niraj M.; Li, Yiming; Chang, E. Y. |
| 國立交通大學 |
2017-04-21T06:56:23Z |
Exploration of Inter-Die Bulk Fin-Typed Field Effect Transistor Process Variation for Reduction of Device Variability
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:23Z |
A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:56:22Z |
Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells
|
Rahman, Mohammad Maksudur; Lee, Ming-Yi; Tsai, Yi-Chia; Higo, Akio; Sekhar, Halubai; Igarashi, Makoto; Syazwan, Mohd Erman; Hoshi, Yusuke; Sawano, Kentarou; Usami, Noritaka; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:14Z |
Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Rahman, Mohammad Maksudur; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:56:02Z |
Low Power and High Driving Capability of Amorphous Silicon Gate Driver Circuit
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layer
|
Shrestha, Niraj Man; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:39Z |
Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:35Z |
32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction
|
Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Chang, Mao-Nang; Li, Yiming; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:55:31Z |
Optimal Geometry Aspect Ratio of Ellipse-Shaped Surrounding-Gate Nanowire Field Effect Transistors
|
Li, Yiming |
| 國立交通大學 |
2017-04-21T06:55:16Z |
Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs
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Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Li, Yiming; Samukawa, Seiji; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:55:15Z |
A Novel Driving Method for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:59Z |
50% Efficiency Intermediate Band Solar Cell Design Using Highly Periodical Silicon Nanodisk Array
|
Hu, Weiguo; Igarashi, Makoto; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS Devices
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Chen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan |
| 國立交通大學 |
2017-04-21T06:49:39Z |
3D 65nm CMOS with 320 degrees C Microwave Dopant Activation
|
Lee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, Dawei; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien-Sheng; Wu, Ching-Yi; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Nanosized-Metal-Grain-Induced Characteristic Fluctuation in Gate-All-Around Si Nanowire Metal-Oxide-Semiconductor Devices
|
Lai, Chun-Ning; Chen, Chien-Yang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawat, Seiji |
| 國立交通大學 |
2017-04-21T06:49:27Z |
On Characteristic Fluctuation of Nonideal Bulk FinFET Devices
|
Li, Yiming; Huang, Wen-Tsung |
| 國立交通大學 |
2017-04-21T06:49:26Z |
Prioritization of Key In-Line Process Parameters for Electrical Characteristic Optimization of High-k Metal Gate Bulk FinFET Devices
|
Su, Ping-Husn; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:20Z |
Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge Roughness
|
Chen, Chieh-Yang; Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:11Z |
Automatic generation of passive equivalent circuits for broadband microstrip antennas
|
Kuo, Yi-Ting; Chao, Hsueh-Yung (Robert); Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:09Z |
Novel strained CMOS devices with STI stress buffer layers
|
Chen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Process Technological Analysis for Dynamic Characteristic Improvement of 16-nm HKMG Bulk FinFET CMOS Circuits
|
Su, Ping-Hsun; Li, Yiming |
