| 國立交通大學 |
2017-04-21T06:55:16Z |
Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs
|
Hou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Li, Yiming; Samukawa, Seiji; Hou, Tuo-Hung |
| 國立交通大學 |
2017-04-21T06:55:15Z |
A Novel Driving Method for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:59Z |
50% Efficiency Intermediate Band Solar Cell Design Using Highly Periodical Silicon Nanodisk Array
|
Hu, Weiguo; Igarashi, Makoto; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS Devices
|
Chen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan |
| 國立交通大學 |
2017-04-21T06:49:39Z |
3D 65nm CMOS with 320 degrees C Microwave Dopant Activation
|
Lee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, Dawei; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien-Sheng; Wu, Ching-Yi; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Nanosized-Metal-Grain-Induced Characteristic Fluctuation in Gate-All-Around Si Nanowire Metal-Oxide-Semiconductor Devices
|
Lai, Chun-Ning; Chen, Chien-Yang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:29Z |
Electronic Structure Dependence on the Density, Size and Shape of Ge/Si Quantum Dots Array
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawat, Seiji |
| 國立交通大學 |
2017-04-21T06:49:27Z |
On Characteristic Fluctuation of Nonideal Bulk FinFET Devices
|
Li, Yiming; Huang, Wen-Tsung |
| 國立交通大學 |
2017-04-21T06:49:26Z |
Prioritization of Key In-Line Process Parameters for Electrical Characteristic Optimization of High-k Metal Gate Bulk FinFET Devices
|
Su, Ping-Husn; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:20Z |
Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge Roughness
|
Chen, Chieh-Yang; Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:11Z |
Automatic generation of passive equivalent circuits for broadband microstrip antennas
|
Kuo, Yi-Ting; Chao, Hsueh-Yung (Robert); Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:09Z |
Novel strained CMOS devices with STI stress buffer layers
|
Chen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Miniband formulation in Ge/Si quantum dot array
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Process Technological Analysis for Dynamic Characteristic Improvement of 16-nm HKMG Bulk FinFET CMOS Circuits
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants
|
Sung, Wen-Li; Chang, Han-Tung; Chen, Chieh-Yang; Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Miniband Formulation of Bilayer Type II Ge/Si Quantum Dot Superlattices
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:50Z |
Numerical Simulation of Physical and Electrical Characteristics of Ge/Si Quantum Dots Based Intermediate Band Solar Cell
|
Lee, Ming-Yi; Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:44Z |
Type-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applications
|
Hu, Weiguo; Fauzi, Mohd Erman; Igarashi, Makoto; Higo, Akio; Lee, Ming-Yi; Li, Yiming; Usami, Noritaka; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices
|
Huang, Cheng-Hao; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications
|
Tsai, Yi-Chia; Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Comprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysis
|
Lu, Zheng-Liang; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
|
Cheng, Hui-Wen; Chiu, Yung-Yueh; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:30Z |
Simulation-Based Evolutionary Approach to Electrical Characteristic Optimization of p-i-n Silicon Thin-Film Solar Cells
|
Lu, Zheng-Liang; Li, Yiming; Cheng, Hui-Wen; Lo, I-Hsiu; Wang, Chao-Chu |
| 國立交通大學 |
2017-04-21T06:48:30Z |
Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors and Circuits
|
Shen, Cheng-Han; Lo, I-Hsiu; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:22Z |
On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps
|
Li, Yiming; Su, Hsin-Wen; Chen, Chieh-Yang; Cheng, Hui-Wen; Chen, Yu-Yu; Chang, Han-Tung |
| 國立交通大學 |
2017-04-21T06:48:21Z |
Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETs
|
Su, Hsin-Wen; Chen, Yu-Yu; Chen, Chieh-Yang; Cheng, Hui-Wen; Chang, Han-Tung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
|
Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
|
Lee, Yao-Jen; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Hsueh, Fu-Kuo; Hou, Fu-Ju; Chen, Po-Cheng; Chen, Hsiu-Chih; Wu, Chien-Ting; Hsu, Shu-Han; Chen, Yi-Ju; Huang, Yao-Ming; Hou, Yun-Fang; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Bo-Yuan; Lin, Kun-Lin; Chen, Min-Cheng; Shen, Chang-Hong; Huang, Guo-Wei; Huang, Kun-Ping; Current, Michael I.; Li, Yiming; Samukawa, Seiji; Wu, Wen-Fa; Shieh, Jia-Min; Chao, Tien-Sheng; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices
|
Li, Yiming; Chang, Han-Tung; Lai, Chun-Ning; Chao, Pei-Jung; Chen, Chieh-Yang |
| 國立交通大學 |
2016-03-28T00:05:42Z |
The Impact of Fin/Sidewall/Gate Line Edge Roughness on Trapezoidal Bulk FinFET Devices
|
Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2016-03-28T00:05:42Z |
Impact of Geometry Aspect Ratio on 10-nm Gate-All-Around Silicon-Germanium Nanowire Field Effect Transistors
|
Chao, Pei-Jung; Li, Yiming |
| 國立交通大學 |
2015-12-02T02:59:38Z |
Miniband Calculation of 3-D Nanostructure Array for Solar Cell Applications
|
Lee, Ming-Yi; Li, Yiming; Samukawa, Seiji |
| 國立交通大學 |
2015-12-02T02:59:16Z |
Circuit-Simulation-Based Multi-Objective Evolutionary Algorithm for Design Optimization of a-Si:H TFTs Gate Driver Circuits Under Multilevel Clock Driving
|
Hung, Sheng-Chin; Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2015-12-02T02:59:16Z |
Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications
|
Chiang, Chien-Hsueh; Li, Yiming |
| 國立交通大學 |
2015-12-02T02:59:06Z |
A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer
|
Shrestha, Niraj Man; Wang, Yuen Yee; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2015-11-26T01:05:56Z |
以幾何規劃方式求解矽鍺異質接面雙極性電晶體摻雜輪廓最佳化之研究
|
陳英傑; Chen, Ying-Chieh; 李義明; Li, Yiming |
| 國立交通大學 |
2015-11-26T01:05:53Z |
隨機金屬閘極功函數導致之16奈米金氧半場效應電晶體元件及電路特性擾動之研究
|
韓銘鴻; Han, Ming-Hung; 李義明; Li, Yiming |
| 國立交通大學 |
2015-11-26T01:05:52Z |
16奈米場效應電晶體特性擾動抑制暨TFT-LCD驅動電路設計優化之研究
|
李國輔; Lee, Kuo-Fu; 李義明; Li, Yiming |
| 國立交通大學 |
2015-11-26T00:55:22Z |
本質參數擾動對於低操作電壓塊材鰭式場效應電晶體元件特性與電路功率消耗變異之研究
|
許勝嘉; Hsu, Sheng-Chia; 李義明; Li, Yiming |
| 國立交通大學 |
2015-07-21T11:20:49Z |
Electrical characteristic fluctuation of 16-nm-gate high-kappa/metal gate bulk FinFET devices in the presence of random interface traps
|
Hsu, Sheng-Chia; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:31Z |
On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effect
|
Chen, Chieh-Yang; Li, Yiming; Chen, Yu-Yu; Chang, Han-Tung; Hsu, Sheng-Chia; Huang, Wen-Tsung; Yang, Chin-Min; Chen, Li-Wen |
| 國立交通大學 |
2015-07-21T08:31:29Z |
Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs
|
Chen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:18Z |
Numerical Simulation of Field Enhancement Property of Surface Enhanced Raman Spectroscopy Active Substrates
|
Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:14Z |
Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
|
Shrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:31:14Z |
Design Optimization of 16-nm Bulk FinFET Technology via Geometric Programming
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:29:54Z |
Source/Drain Series Resistance Extraction in HKMG Multifin Bulk FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:29:33Z |
Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices
|
Su, Ping-Hsun; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:29:23Z |
Capacitance Characteristic Optimization of Germanium MOSFETs with Aluminum Oxide by Using a Semiconductor-Device-Simulation-Based Multi-Objective Evolutionary Algorithm Method
|
Li, Yiming; Chen, Chieh-Yang |
| 國立交通大學 |
2015-07-21T08:29:13Z |
Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs
|
Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu |
