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Taiwan Academic Institutional Repository >
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"li ym"
Showing items 46-54 of 54 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:19:39Z |
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
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Li, YM; Yu, SM |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current
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Li, YM; Yu, SM; Lee, JW |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Transition energies of vertically coupled multilayer nanoscale InAs/GaAs semiconductor quantum dots of different shapes
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Li, YM |
| 國立交通大學 |
2014-12-08T15:18:51Z |
A numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
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Li, YM; Yu, SM |
| 國立交通大學 |
2014-12-08T15:18:40Z |
A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors
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Li, YM; Chou, HM; Lee, JW; Lee, BS |
| 國立交通大學 |
2014-12-08T15:18:30Z |
Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs
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Li, YM; Chou, HM; Lee, JW |
| 國立交通大學 |
2014-12-08T15:18:30Z |
A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs
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Li, YM; Chou, HM |
| 國立交通大學 |
2014-12-08T15:18:21Z |
An iterative method for single and vertically stacked semiconductor wuantum dots simulation
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Li, YM |
| 國立交通大學 |
2014-12-08T15:16:38Z |
Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era.
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Lee, JW; Li, YM |
Showing items 46-54 of 54 (2 Page(s) Totally)
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