|
English
|
正體中文
|
简体中文
|
總筆數 :0
|
|
造訪人次 :
51972445
線上人數 :
977
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"li ym"的相關文件
顯示項目 46-54 / 54 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:19:39Z |
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
|
Li, YM; Yu, SM |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current
|
Li, YM; Yu, SM; Lee, JW |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Transition energies of vertically coupled multilayer nanoscale InAs/GaAs semiconductor quantum dots of different shapes
|
Li, YM |
| 國立交通大學 |
2014-12-08T15:18:51Z |
A numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
|
Li, YM; Yu, SM |
| 國立交通大學 |
2014-12-08T15:18:40Z |
A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors
|
Li, YM; Chou, HM; Lee, JW; Lee, BS |
| 國立交通大學 |
2014-12-08T15:18:30Z |
Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs
|
Li, YM; Chou, HM; Lee, JW |
| 國立交通大學 |
2014-12-08T15:18:30Z |
A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs
|
Li, YM; Chou, HM |
| 國立交通大學 |
2014-12-08T15:18:21Z |
An iterative method for single and vertically stacked semiconductor wuantum dots simulation
|
Li, YM |
| 國立交通大學 |
2014-12-08T15:16:38Z |
Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era.
|
Lee, JW; Li, YM |
顯示項目 46-54 / 54 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
|
