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"li ym"的相關文件
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| 國立交通大學 |
2019-04-03T06:39:50Z |
Energy states and magnetization in nanoscale quantum rings
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Voskoboynikov, O; Li, YM; Lu, HM; Shih, CF; Lee, CP |
| 國立交通大學 |
2014-12-08T15:44:47Z |
A mixed lubrication model for computer simulation of extrusion processes
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Hsu , TC; Li, YM; Hung, CH |
| 國立交通大學 |
2014-12-08T15:44:23Z |
Energy and coordinate dependent effective mass and confined electron states in quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
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Li, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:13Z |
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:08Z |
Electron energy state dependence on the shape and size of semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:43:08Z |
A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
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Li, YM; Liu, JL; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:33Z |
Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:29Z |
A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:10Z |
A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
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Li, YM; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Calculation of induced electron states in three-dimensional semiconductor artificial molecules
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
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Li, YM; Lee, JW; Tang, TW; Chao, TS; Lei, TF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:42Z |
Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential
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Li, YM; Tang, TW; Wang, XL |
| 國立交通大學 |
2014-12-08T15:41:42Z |
A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition
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Tang, TW; Li, YM |
| 國立交通大學 |
2014-12-08T15:41:17Z |
An investigation of magnetic field effects on energy states for nanoscale InAs/GaAs quantum rings and dots
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Li, YM; Lu, HM |
| 國立交通大學 |
2014-12-08T15:41:11Z |
Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design
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Li, YM; Lee, JW; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:08Z |
A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization
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Li, YM; Cho, YY; Wang, CS; Huang, KY |
| 國立交通大學 |
2014-12-08T15:41:08Z |
Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings
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Li, YM; Lu, HM |
| 國立交通大學 |
2014-12-08T15:40:53Z |
A novel numerical approach to heterojunction bipolar transistors circuit simulation
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Li, YM; Huang, KY |
| 國立交通大學 |
2014-12-08T15:40:46Z |
Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings
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Li, YM; Lu, HM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:41Z |
A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
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Li, YM |
| 國立交通大學 |
2014-12-08T15:40:17Z |
Numerical calculation of electron energy states for nanoscopic InAs/GaAs quantum rings
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Li, YM |
| 國立交通大學 |
2014-12-08T15:40:14Z |
A time-domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion
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Huang, KY; Li, YM; Lee, CP |
| 國立交通大學 |
2014-12-08T15:39:25Z |
Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
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Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:22Z |
Intelligent BSIM4 model parameter extraction for sub-100 nm MOSFET era
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Li, YM; Cho, YY |
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