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机构 日期 题名 作者
臺大學術典藏 2020-01-13T08:22:37Z The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits Liao, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117)) Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z A non-linear analytic stress model for the analysis on the stress interaction between TSVs Liao, M.-H.; Kao, S.-C.; Huang, S.-J.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits Liao, M.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme Liao, M.-H.; Huang, S.C.; MING-HAN LIAO

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