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機構 日期 題名 作者
臺大學術典藏 2020-01-13T08:22:37Z The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits Liao, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117)) Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z A non-linear analytic stress model for the analysis on the stress interaction between TSVs Liao, M.-H.; Kao, S.-C.; Huang, S.-J.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:36Z The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits Liao, M.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme Liao, M.-H.; Huang, S.C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators Liao, M.-H.; Lien, C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:35Z Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:34Z Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:34Z Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:34Z The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:34Z The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:34Z The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:33Z Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics Chen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:33Z Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:33Z Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:33Z Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100) Liao, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:32Z Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:22:32Z Ferroelectric HfZrO2 FETs for steep switch onset Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO
臺大學術典藏 2020-01-13T08:17:07Z Body force weight functions of cracked bodies Ma, C.-C.; Liao, M.-H.; CHIEN-CHING MA
臺大學術典藏 2020-01-13T08:17:07Z Determinations of mixed-mode stress intensity factors for cracked bodies subjected to thermal loadings by using the thermal weight function method Ma, C.-C.; Liao, M.-H.; CHIEN-CHING MA

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