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"lin cf"的相關文件
顯示項目 61-70 / 210 (共21頁) << < 2 3 4 5 6 7 8 9 10 11 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:42:17Z |
A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
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Fang, CY; Lin, CF; Chang, EY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
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Yu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Electrical and optical properties of beryllium-implanted Mg-doped GaN
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Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:18Z |
Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off
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Chu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Correlation between dewatering index and dewatering performance of three mechanical dewatering devices
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Pan, JRS; Huang, CP; Cherng, MY; Li, KC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations
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Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
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Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
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Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
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Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Effect of rapid thermal annealing on beryllium implanted p-type GaN
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Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC |
顯示項目 61-70 / 210 (共21頁) << < 2 3 4 5 6 7 8 9 10 11 > >> 每頁顯示[10|25|50]項目
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