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机构 日期 题名 作者
國立交通大學 2014-12-08T15:48:37Z Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:31:42Z Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:29:52Z Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi
國立交通大學 2014-12-08T15:29:05Z Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:28:51Z Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:40Z A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:20Z Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory Huang, Jiun-Jia; Hou, Tuo-Hung; Hsu, Chung-Wei; Tseng, Yi-Ming; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi
國立交通大學 2014-12-08T15:15:52Z Resistive switching mechanisms of V-doped SrZrO3 memory films Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:13:00Z Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:11:49Z High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:10:51Z Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:06:33Z High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:06:16Z Resistive switching properties of SrZrO(3)-based memory films Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:05:13Z Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films Lin, Chun-Chieh; Yu, Jung-Sheng; Lin, Chih-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:05:08Z Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學 2007-12 Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films 林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學 2007-12 Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films 林群傑; Lin, Chun-Chieh; Yu Jung-Sheng ;Lin Chih-Yang ; Lin Chen-Hsi ; Tseng, Tseung-Yuen
國立東華大學 2007-12 Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO3 thin films 林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Lin, Meng-Han; Lin,Chen-Hsi ;Tseng, Tseung-Yuen
國立東華大學 2007-04 Resistive switching properties of SrZrO3-based memory films 林群傑; Lin, Chun-Chieh; Lin, Chao-Cheng ;Tu Bing-Chung ; Yu Jung-Sheng ; Lin Chen-Hsi ; Tseng, Tseung-Yuen
國立東華大學 2006-09 Resistive switching mechanisms of V-doped SrZrO3 memory films 林群傑; Lin, Chun-Chieh; Tu, Bing-Chung ;Lin Chao-Cheng ; Lin, Chen-Hsi;Tseng, Tseung-Yuen

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