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"lin chen hsi"的相關文件
顯示項目 11-20 / 30 (共3頁)
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| 國立交通大學 |
2014-12-08T15:48:37Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
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Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:52Z |
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
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Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi |
| 國立交通大學 |
2014-12-08T15:29:05Z |
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
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Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:40Z |
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
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Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:20Z |
Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory
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Huang, Jiun-Jia; Hou, Tuo-Hung; Hsu, Chung-Wei; Tseng, Yi-Ming; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
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Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:00Z |
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
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Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:11:49Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
顯示項目 11-20 / 30 (共3頁)
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