| 國立虎尾科技大學 |
2007 |
Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (NH4)2Sx treatment
|
Tsai, Chia-Lung;Lin, Yow-Jon;Wu, Ping-Hsun;Chen, Shu-You;Liu, Day-Shan;Hong, Jia-Huang;Liu, Chia-Jyi;Shih, Yu-Tai;Cheng, Jie-Min;Chang, Hsing-Cheng |
| 國立虎尾科技大學 |
2007 |
Comment on ``Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts'' [Appl. Phys. Lett. 89, 033503 (2006)]
|
Lin, Yow-Jon;Tsai, Chia-Lung;Liu, Day-Shan |
| 國立彰化師範大學 |
2006-12 |
True Dipole at the Indium Tin Oxide/Organic Semiconductor Interface
|
Lin, Yow-Jon; Hong, Jia-huang; Lien, Yi-Chun; Liu, Bei-Yuan |
| 國立彰化師範大學 |
2006-12 |
Changes in Surface Band Bending, Surface Work Function, and Sheet Resistance of Undoped ZnO Films Due to (NH4)2Sx Treatment
|
Lin, Yow-Jon; Tsai, Chia-Lung |
| 國立彰化師範大學 |
2006-10 |
Comment on “Electrospun Hybrid Organic/Inorganic Semiconductor Schottky Nanodiode” [ Appl. Phys. Lett. 89, 033505 (2006) ]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-10 |
Hole-transport Barrier and Band Bending at the Indium tin Oxide/Polymer/p-AlGaN Interface
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-10 |
Comment on “Contact Mechanisms and Design Principles for Alloyed Ohmic Contacts to n-GaN” [ J. Appl. Phys. 95, 7940 (2004) ]
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-09 |
Improvement of Ni Nonalloyed Ohmic Contacts on p-GaN Films by Changing Thickness of p-InGaN Capping Layers
|
Chu, Yow-Lin; Lin, Yow-Jon; Ho, Cheng-Hsiang; Chen, Wei-Li |
| 國立彰化師範大學 |
2006-09 |
Mechanisms of Performance Improvement for Polymer Light-Emitting Diodes Fabricated on (NH4)2Sx-Treated Indium-Tin Oxide Substrates
|
Lin, Yow-Jon; You, Chang-Feng; Chou, Wei-Yang; Lin, Shih-Ting |
| 國立成功大學 |
2006-08 |
Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)(2)S-x treatment
|
Lin, Yow-Jon; Lee, Ching-Ting; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2006-08 |
Effects of the Thickness of Capping Layers on Electrical Properties of Ni Ohmic Contacts on p-AlGaN and p-GaN using an Ohmic Recessed Technique
|
Lin, Yow-Jon; Chu, Yow-Lin |
| 國立彰化師範大學 |
2006-08 |
Changes in Activation Energies of Donors and Carrier Concentration in Si-doped n-type GaN Due to (NH4)2Sx Treatment
|
Lin, Yow-Jon; Lee, Ching-Ting; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2006-06 |
Nonalloyed Ohmic Formation for p-type AlGaN with p-type GaN Capping Layers Using Ohmic Recessed Technique
|
Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-06 |
Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
|
Lin, Yow-Jon; Chu, Yow-Lin; Liu, Day-Shan; Lee, Chi-Sen; Chien, Feng-Tso |
| 國立彰化師範大學 |
2006-05 |
Optical and Electrical Properties of Undoped ZnO Films
|
Lin, Yow-Jon; Tsai, Chia-Lung; Lu, Yang-Ming; Liu, Chia-Jyi |
| 國立成功大學 |
2006-04 |
Electronic transport and Schottky barrier heights of Ni/Au contacts on n-type GaN surface with and without a thin native oxide layer
|
Lin, Yow-Jon; Lin, Wen-Xiang; Lee, Ching-Ting; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2006-04 |
Electronic Transport and Schottky Barrier Heights of Ni/Au Contacts on n-type GaN Surface with and Without a Thin Native Oxide Layer
|
Lin, Yow-Jon; Lin, Wen-Xiang; Lee, Ching-Ting; Chang, Hsing-Cheng |
| 國立彰化師範大學 |
2006-04 |
Induced Changes in Surface Band Bending of n-type and p-type AlGaN by Oxidation and Wet Chemical Treatments
|
Lin, Yow-Jon; Chu, Yow-Lin; Lin, Wen-Xiang; Chien, Feng-Tso; Lee, Chi-Sen |
| 國立彰化師範大學 |
2006-03 |
Enhancement of Schottky Barrier Height on p-type GaN by (NH4)2Sx Treatment
|
Lin, Yow-Jon; You, Chang-Feng; Lee, Chi-Sen |
| 國立成功大學 |
2006-02-13 |
Enhanced efficiency in polymer light-emitting diodes due to the improvement of charge-injection balance
|
Lin, Yow-Jon; Chou, Wei-Yang; Lin, Shih-Ting |
| 國立成功大學 |
2006-02 |
Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)(2)S-x treatment
|
Lin, Yow-Jon; Lin, Wen-Xiang; Lee, Ching-Ting; Chien, Feng-Tso |
| 國立彰化師範大學 |
2006-02 |
Enhanced Efficiency in Polymer Light-emitting Diodes Due to the Improvement of Charge-injection Balance
|
Lin, Yow-Jon; Chou, Wei-Yang; Lin, Shih-Ting |
| 國立彰化師範大學 |
2006-02 |
Changes in Optical and Electrical Properties and Surface Recombination Velocity of n-type GaN Due to (NH4)2Sx Treatment
|
Lin, Yow-Jon; Lin, Wen-Xiang; Lee, Ching-Ting; Chien, Feng-Tso |
| 國立彰化師範大學 |
2006-01 |
Formation Mechanisms of Nonalloyed Ohmic Contacts to P-type AlGaN with the Capping Layer
|
Lin, Yow-Jon |
| 國立成功大學 |
2006 |
Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)(2)S-x-treated indium-tin oxide substrates
|
Lin, Yow-Jon; You, Chang-Feng; Chou, Wei-Yang; Lin, Shih-Ting |
