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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"lin yow jon"的相關文件
顯示項目 101-110 / 186 (共19頁)
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| 國立虎尾科技大學 |
2007 |
Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (NH4)2Sx treatment
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Tsai, Chia-Lung;Lin, Yow-Jon;Wu, Ping-Hsun;Chen, Shu-You;Liu, Day-Shan;Hong, Jia-Huang;Liu, Chia-Jyi;Shih, Yu-Tai;Cheng, Jie-Min;Chang, Hsing-Cheng |
| 國立虎尾科技大學 |
2007 |
Comment on ``Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts'' [Appl. Phys. Lett. 89, 033503 (2006)]
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Lin, Yow-Jon;Tsai, Chia-Lung;Liu, Day-Shan |
| 國立彰化師範大學 |
2006-12 |
True Dipole at the Indium Tin Oxide/Organic Semiconductor Interface
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Lin, Yow-Jon; Hong, Jia-huang; Lien, Yi-Chun; Liu, Bei-Yuan |
| 國立彰化師範大學 |
2006-12 |
Changes in Surface Band Bending, Surface Work Function, and Sheet Resistance of Undoped ZnO Films Due to (NH4)2Sx Treatment
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Lin, Yow-Jon; Tsai, Chia-Lung |
| 國立彰化師範大學 |
2006-10 |
Comment on “Electrospun Hybrid Organic/Inorganic Semiconductor Schottky Nanodiode” [ Appl. Phys. Lett. 89, 033505 (2006) ]
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Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-10 |
Hole-transport Barrier and Band Bending at the Indium tin Oxide/Polymer/p-AlGaN Interface
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Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-10 |
Comment on “Contact Mechanisms and Design Principles for Alloyed Ohmic Contacts to n-GaN” [ J. Appl. Phys. 95, 7940 (2004) ]
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Lin, Yow-Jon |
| 國立彰化師範大學 |
2006-09 |
Improvement of Ni Nonalloyed Ohmic Contacts on p-GaN Films by Changing Thickness of p-InGaN Capping Layers
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Chu, Yow-Lin; Lin, Yow-Jon; Ho, Cheng-Hsiang; Chen, Wei-Li |
| 國立彰化師範大學 |
2006-09 |
Mechanisms of Performance Improvement for Polymer Light-Emitting Diodes Fabricated on (NH4)2Sx-Treated Indium-Tin Oxide Substrates
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Lin, Yow-Jon; You, Chang-Feng; Chou, Wei-Yang; Lin, Shih-Ting |
| 國立成功大學 |
2006-08 |
Changes in activation energies of donors and carrier concentration in Si-doped n-type GaN due to (NH4)(2)S-x treatment
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Lin, Yow-Jon; Lee, Ching-Ting; Chang, Hsing-Cheng |
顯示項目 101-110 / 186 (共19頁)
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