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"lin z c"的相关文件
显示项目 21-30 / 220 (共22页) << < 1 2 3 4 5 6 7 8 9 10 > >> 每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:15:56Z |
Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
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Lin, S. D.; Lin, Z. C.; Lee, C. P. |
| 國立交通大學 |
2014-12-08T15:14:39Z |
Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires
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Lin, Z. C.; Hsieh, W. H.; Lee, C. P.; Suen, Y. W. |
| 國立交通大學 |
2014-12-08T15:12:46Z |
Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substrates
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Lin, Z. C.; Lin, S. D.; Lee, C. P. |
| 國立臺灣科技大學 |
2014 |
Abrasive removal depth for polishing a sapphire wafer by a cross-patterned polishing pad with different abrasive particle sizes
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Lin, Z.-C.;Wang, R.-Y. |
| 國立臺灣科技大學 |
2014 |
Simulation of temperature field during nanoscale orthogonal cutting of single-crystal silicon by molecular statics method
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Lin, Z.-C.;Lin, M.-H.;Hsu, Y.-C. |
| 國立臺灣科技大學 |
2014 |
Fabrication method and experiment study of nanoscale trapezoidal groove on sapphire substrate by using atomic force microscope under a fixed cutting depth and changed down force
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Lin, Z.-C.;Tsai, J.-S.;Hsu, Y.-C.;Lin, C.-T. |
| 國立臺灣科技大學 |
2014 |
A study of simulation of three-dimensional quasi-steady molecular statics nanoscale orthogonal cutting of single-crystal silicon material having rows of atoms with vacancy defect
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Lin, Z.-C.;Jian, C.-S.;Wang, R.-Y. |
| 國立臺灣科技大學 |
2013 |
Simulation and temperature rise analysis for nanocutting sapphire workpiece with quasi-steady molecular statics method
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Lin, Z.-C.;Hsu, Y.-C. |
| 國立臺灣科技大學 |
2013 |
Establishment and analysis of tapping mode atomic force microscopy simulative measurement model affected by external environment vibration
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Lin, Z.-C.;Chou, M.-H. |
| 國立臺灣科技大學 |
2013 |
Investigation of the abrasive removal depth for bowl-shaped structure of sapphire wafer under compensated chemical mechanical polishing
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Lin, Z.C.;Wang, R.Y. |
显示项目 21-30 / 220 (共22页) << < 1 2 3 4 5 6 7 8 9 10 > >> 每页显示[10|25|50]项目
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