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Showing items 11-20 of 27  (3 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:05:21Z IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:20Z CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:19Z INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:18Z ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD LIU, DG; CHIN, TC; LEE, CP; HWANG, HL
國立交通大學 2014-12-08T15:05:16Z ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG
國立交通大學 2014-12-08T15:05:12Z QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:06Z PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAAS CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA
國立交通大學 2014-12-08T15:05:00Z A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION LIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK
國立交通大學 2014-12-08T15:04:59Z HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES CHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP
國立交通大學 2014-12-08T15:04:54Z DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY LIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ

Showing items 11-20 of 27  (3 Page(s) Totally)
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