|
"liu dg"的相關文件
顯示項目 11-27 / 27 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:05:21Z |
IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS
|
WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:20Z |
CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
|
WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:19Z |
INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
|
WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:18Z |
ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD
|
LIU, DG; CHIN, TC; LEE, CP; HWANG, HL |
| 國立交通大學 |
2014-12-08T15:05:16Z |
ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS
|
WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG |
| 國立交通大學 |
2014-12-08T15:05:12Z |
QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
|
WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:05:06Z |
PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAAS
|
CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA |
| 國立交通大學 |
2014-12-08T15:05:00Z |
A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION
|
LIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK |
| 國立交通大學 |
2014-12-08T15:04:59Z |
HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
|
CHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:54Z |
DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY
|
LIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:04:54Z |
INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
|
WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:04:49Z |
PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
|
LIU, DG; CHANG, KH; LEE, CP; HSU, TM; TIEN, YC |
| 國立交通大學 |
2014-12-08T15:04:49Z |
FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS
|
HSU, TM; TIEN, YC; LU, NH; TSAI, SP; LIU, DG; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:47Z |
INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLS
|
TSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; CHANG, Y; FAN, JC; LIU, DG |
| 國立交通大學 |
2014-12-08T15:04:39Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
|
LIU, DG; FAN, JC; LEE, CP; CHANG, KH; LIOU, DC |
| 國立交通大學 |
2014-12-08T15:01:42Z |
Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
|
Yang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductors
|
Liu, DG; Lee, CP |
顯示項目 11-27 / 27 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
|
