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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
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Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T08:30:58Z |
The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)
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Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi |
| 國立交通大學 |
2014-12-12T01:54:59Z |
以有機金屬化學氣相沉積成長氮化銦鋁/氮化鋁/氮化鎵異質結構之高電子遷移率電晶體的應用
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劉冠昕; Liu, Kuan-Shin; 張翼; 馬哲申; Chang, Edward Yi; Maa, Jer-Shen |
Showing items 1-3 of 3 (1 Page(s) Totally)
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