| 臺大學術典藏 |
2022-09-21T23:30:31Z |
Cryogenic Si/SiGe Heterostructure Flash Memory Devices
|
Hou, Wei Chih; Hsu, Nai Wen; Wang, Tz Ming; Liu, Chia You; Kao, Hsiang Shun; MIIN-JANG CHEN; JIUN-YUN LI |
| 臺大學術典藏 |
2022-09-21T23:30:31Z |
Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
|
Jiang, Yu Sen; Huang, Kuei Wen; Yi, Sheng Han; Wang, Chin I.; Chang, Teng Jan; Kao, Wei Chung; Wang, Chun Yuan; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-06-21T23:23:53Z |
Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering
|
Yi, Sheng Han; Chan, Yu Chen; Mo, Chi Lin; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-06-21T23:23:51Z |
Large area and rapid electron beam annealing for high-quality epitaxial GaN layer
|
Lee, Wei Hao; Jhong, Fong Jyun; Yin, Yu Tung; Chou, Chun Yi; Shyue, Jing Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:25Z |
Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget
|
Wang, Ting Yun; Kao, Wei Chung; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
|
Chang, Teng Jan; Jiang, Yu Sen; Yi, Sheng Han; Chou, Chun Yi; Wang, Chin I.; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation
|
Ling, Chen Hsiang; Chou, Chun Yi; Chung, Tsai Fu; Shyue, Jing Jong; JER-REN YANG; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T15:04:52Z |
Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
|
Chou, Chun Yi; Chen, Hsing Yang; Jiang, Yu Sen; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition
|
Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
|
Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film
|
Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition
|
Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
|
Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Modulation of zirconia ferroelectricity via crystal orientation of PT electrode
|
Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:44Z |
Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film
|
Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
