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"ou kl"的相关文件
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| 國家衛生研究院 |
2016-03 |
Cranioplasty using a novel osteoconductive scaffold and platelet gel
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Tseng, CL;Chang, GW;Ou, KL;Chou, WT;Wu, TH;Fang, HW;Tsai, JC;Chen, TM |
| 臺北醫學大學 |
2015 |
An Electrospinning Apparatus with a Sideway Motion Device and a Method of Using the Same
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Chen, CC;Yang, JC;Ker, CY;Liu, CY;Ou, KL |
| 國立交通大學 |
2014-12-08T15:44:19Z |
Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes
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Yang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL |
| 國立交通大學 |
2014-12-08T15:42:00Z |
Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment
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Ou, KL; Wu, WF; Chou, CP; Chiou, SY; Wu, CC |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Improving the electrical integrity of Cu-CoSi2 contacted n(+)p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier
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Yang, WL; Wu, WF; You, HC; Ou, KL; Lei, TF; Chou, CP |
| 國立交通大學 |
2014-12-08T15:41:21Z |
Effects of nitrogen plasma treatment on tantalum diffusion barriers in copper metallization
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Wu, WF; Ou, KL; Chou, CP; Wu, CC |
| 國立交通大學 |
2014-12-08T15:41:19Z |
PECVD-Ti/TiNx barrier with multilayered amorphous structure and high thermal stability for copper metallization
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Wu, WF; Ou, KL; Chou, CP; Hsu, JL |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Barrier capability of HfN films with various nitrogen concentrations against copper diffusion in CuHf-N/n(+)-p junction diodes
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Ou, KL; Chiou, SY; Lin, MH; Hsu, RQ |
| 國立交通大學 |
2014-12-08T15:36:55Z |
Comparative study of polycrystalline Ti, amorphous Ti, and multiamoIrphous Ti as a barrier film for Cu interconnect
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Ou, KL; Yu, MS; Hsu, RQ; Lin, MH |
| 國立交通大學 |
2014-12-08T15:19:10Z |
Study of the morphologies and dielectric constants of nanoporous materials derived from benzoxazine-terminated poly(epsilon-caprolactone)/polybenzoxazine co-polymers
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Su, YC; Chen, WC; Ou, KL; Chang, FC |
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