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Showing items 31-55 of 75 (3 Page(s) Totally)
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Institution	Date	Title	Author
國立成功大學	2009-04-15	GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer	Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C.
國立成功大學	2009	GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes	Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.
國立成功大學	2009	GaN-Based LED with Embedded Microlens-like Structure	Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong
國立成功大學	2008-09-08	Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads	Sheu, Jinn-Kong; Hung, I-Hsiu; Lai, Wei-Chih; Shei, Shih-Chang; Lee, M. L.
國立成功大學	2008-09	Nitride-Based LEDs With a Hybrid Al Mirror +TiO2/SiO2 DBR Backside Reflector	Chang, Shoou-Jinn; Shen, C. F.; Hsieh, M. H.; Kuo, C. T.; Ko, T. K.; Chen, W. S.; Shei, Shih-Chang
國立成功大學	2008-07	Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs	Jang, Chung-Hsun; Sheu, Jinn-Kong; Tsai, C. M.; Shei, Shih-Chang; Lai, W. C.; Chang, Shoou-Jinn
國立成功大學	2007-11	Highly reliable high-brightness GaN-based flip chip LEDs	Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang; Ko, T. K.; Shen, C. F.; Hsu, Y. P.; Chang, C. S.; Tsai, J. M.; Lai, W. C.; Lin, A. J.
國立成功大學	2007-07-02	Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography	Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong
國立成功大學	2007-06	GaN-based power LEDs with CMOS ESD protection circuits	Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. S.; Shei, Shih-Chang
國立成功大學	2007-05-15	Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate	Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang
國立成功大學	2007-05	Nitride-based Schottky barrier sensor module with high electrostatic discharge reliability	Horng, J. J.; Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, T. K.; Shei, Shih-Chang
國立成功大學	2007-05	Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes	Shei, Shih-Chang; Sheu, Jinn-Kong; Shen, Chien-Fu
國立成功大學	2007-04-15	AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates	Chang, Shoou-Jinn; Ko, T. K.; Sheu, Jinn-Kong; Shei, Shih-Chang; Lai, W. C.; Chiou, Y. Z.; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Shen, C. F.
國立成功大學	2007	Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes	Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z.
國立成功大學	2006-11	Nitride-based light emitting diodes with textured sidewalls and pillar waveguides	Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung
國立成功大學	2006-09	Highly reliable nitride-based LEDs with internal ESD protection diodes	Chang, Shoou-Jinn; Shen, C. F.; Shei, Shih-Chang; Chuang, R. W.; Chang, C. S.; Chen, W. S.; Ko, T. K.; Sheu, Jinn-Kong
國立成功大學	2006-08	Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors	Chang, Shoou-Jinn; Chen, W. S.; Lin, Y. C.; Chang, C. S.; Ko, T. K.; Hsu, Y. P.; Shen, C. F.; Tsai, J. M.; Shei, Shih-Chang
國立成功大學	2006-08	Nitride-based flip-chip p-i-n photodiodes	Ko, T. K.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.; Shen, C. F.
國立成功大學	2006-08	Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors	Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Y. C.; Chang, C. S.; Chen, W. S.; Wang, C. K.; Sheu, Jinn-Kong; Lai, W. C.
國立成功大學	2006-08	AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers	Ko, T. K.; Chang, Shoou-Jinn; Sheu, Jinn-Kong; Shei, Shih-Chang; Chiou, Yu-Zung; Lee, M. L.; Shen, C. F.; Chang, S. P.; Lin, K. W.
國立成功大學	2006-08	InGaN p-i-n ultraviolet - A band-pass photodetectors	Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W.
國立成功大學	2006-06	High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD	Tsai, C. M.; Sheu, Jinn-Kong; Wang, P. T.; Lai, W. C.; Shei, Shih-Chang; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Yan-Kuin
國立成功大學	2006-04	Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes	Shei, Shih-Chang; Sheu, Jinn-Kong; Tsai, Chi-Ming; Lai, Wei-Chi; Lee, Ming-Lun; Kuo, Cheng-Huang
國立成功大學	2006-04	GaN-based p-i-n sensors with ITO contacts	Chang, Shoou-Jinn; Ko, T. K.; Su, Yan-Kuin; Chiou, Yu-Zung; Chang, C. S.; Shei, Shih-Chang; Sheu, Jinn-Kong; Lai, W. C.; Lin, Y. C.; Chen, W. S.
國立成功大學	2006-03-13	InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface	Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C.

Showing items 31-55 of 75 (3 Page(s) Totally)
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